Effect of Temperature on Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells

Document Type: Research Article

Authors

1 Department of Advanced Materials and Renewable Energy, Iranian Research Organization for Science and Technology (IROST), Tehran, Iran

2 Department of Mechanical Engineering, Iranian Research Organization for Science and Technology (IROST), Tehran, Iran

Abstract

Effects of temperature on electrical parameters of polysilicon solar cells, fabricated using the
phosphorous spin-on diffusion technique, have been studied. The current density–voltage
characteristics of polycrystalline silicon solar cells were measured in dark at different temperature
levels. For this purpose, a diode equivalent model was used to obtain saturation current densities
measured at the required temperatures. The experimental results showed that the increase in
temperature from 27 to 70˚C produced a rapid increase in the saturation current densities from 0.00003
to 0.0005A. The changes in the open circuit voltage and the short circuit current density were found to
be linear with the temperature variations: about 3 mV/˚C reduction in the open circuit voltage was
observed. Measurements of the short circuit current density revealed a very small dependency of the
current density on the temperature variations. Accordingly, the short circuit current density increased
from 17.8 to 18.4 mA with increase in temperature from 27 to 107˚C. Measurements of the output
power versus load resistance were obtained at different temperature levels. The results showed that the
output power dropped by 30% with temperature rise from 27 to 107˚C.

Keywords


 

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